Nitride semiconductor device and manufacturing method thereof

Details Nitride semiconductor device and manufacturing method thereof Nitride semiconductor device and manufacturing method thereof

2011-03-29

2011-03-29

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C257S103000, C257SE33033, C257SE33034

Reexamination Certificate

active

07915633

ABSTRACT:
A nitride semiconductor device includes: a semiconductor substrate; a p-type semiconductor layer formed over the semiconductor substrate, made of a nitride semiconductor, and containing first impurities; and an insulating film contacting the p-type semiconductor layer and having an impurity region containing second impurities for trapping hydrogen. Since residual hydrogen in the p-type semiconductor layer is trapped in the impurity region, the hydrogen concentration in the impurity region is higher than that in the insulating film excluding the impurity region.

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