Nitride semiconductor device and a process of manufacturing...

Details Nitride semiconductor device and a process of manufacturing... Nitride semiconductor device and a process of manufacturing...

2005-04-05

2005-04-05

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257S187000, C257S200000, C438S048000, C438S060000

Reexamination Certificate

active

06876009

ABSTRACT:
The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other. As viewed from the side face of the recess, the active layer and the p-type layer are formed across the n-type layer.

REFERENCES:
patent: 6229151 (2001-05-01), Takeuchi et al.
patent: 11-112029 (1999-04-01), None
P. Waltereit et al., “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” letters to nature, NATURE, Aug. 24, 2000, vol. 406, pp. 865-868.

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