Nitride semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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Details

Other Related Categories

C257S014000, C257SE33008, C257SE33012, C257SE33025, C257SE33026, C257SE33034

Type

Reexamination Certificate

Status

active

Patent number

07868316

Description

ABSTRACT:
There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.

REFERENCES:
patent: 4695857 (1987-09-01), Baba et al.
patent: 4792832 (1988-12-01), Baba et al.
patent: 4882609 (1989-11-01), Schubert et al.
patent: 5693958 (1997-12-01), Torihara et al.
patent: 5747827 (1998-05-01), Duggan et al.
patent: 5851905 (1998-12-01), McIntosh et al.
patent: 6455870 (2002-09-01), Wang et al.
patent: 7705364 (2010-04-01), Lee et al.
patent: 2001/0002048 (2001-05-01), Koike et al.
patent: 2007/0170459 (2007-07-01), Kyono et al.
patent: 10-2008-0010136 (2008-01-01), None

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