Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reissue Patent
2000-06-07
2010-12-28
Nguyen, Joseph (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S014000, C257S015000, C257S079000, C257S103000, C257S613000, C257S094000, C257S096000, C257S615000
Reissue Patent
active
RE042008
ABSTRACT:
An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride, semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1—xN (0<x<1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5×1016to 2×1018/cm3.
REFERENCES:
patent: 5557115 (1996-09-01), Shakuda
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5619518 (1997-04-01), Horie et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5751013 (1998-05-01), Kidoguchi et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5945689 (1999-08-01), Koike et al.
patent: 6121634 (2000-09-01), Saito et al.
patent: 6153894 (2000-11-01), Udagawa
patent: 6163038 (2000-12-01), Chen et al.
patent: 6288416 (2001-09-01), Koike et al.
patent: 6555403 (2003-04-01), Domen et al.
patent: 6580099 (2003-06-01), Nakamura et al.
patent: 6900465 (2005-05-01), Nakamura et al.
patent: 0 732 754 (1996-09-01), None
patent: 2 323 210 (1998-09-01), None
patent: 58-197784 (1983-11-01), None
patent: 3-30486 (1991-02-01), None
patent: 4-68579 (1992-03-01), None
patent: 04-212479 (1992-08-01), None
patent: 04-218994 (1992-08-01), None
patent: 5-206513 (1993-08-01), None
patent: 5-291618 (1993-11-01), None
patent: 6-5916 (1994-01-01), None
patent: 6-21511 (1994-01-01), None
patent: 6-268315 (1994-09-01), None
patent: 06-283822 (1994-10-01), None
patent: 07-193333 (1995-07-01), None
patent: 07-326824 (1995-12-01), None
patent: 08-111558 (1996-04-01), None
patent: 08-139407 (1996-05-01), None
patent: 08-228025 (1996-09-01), None
patent: 8-264831 (1996-10-01), None
patent: 9-36423 (1997-02-01), None
patent: 09-232666 (1997-09-01), None
patent: 09-232675 (1997-09-01), None
patent: 10-12969 (1998-01-01), None
patent: 10-022524 (1998-01-01), None
patent: 10-107319 (1998-04-01), None
patent: 10-4210 (1998-06-01), None
patent: 10-163523 (1998-06-01), None
patent: 10-256601 (1998-09-01), None
patent: 11-159482 (1999-06-01), None
patent: 2007-208300 (2007-08-01), None
patent: 98/19375 (1998-05-01), None
Japanese Official Action issued Jan. 26, 2010 in corresponding Japanese Application No. 2004-329250 with partial English translation.
Akasaki, I., “Advanced Electronics I-21 Group-III Nitride Semiconductor”, Japan, Baifu-kan, Dec. 8, 1999, First Edition, pp. 260-263.
A. Salvador et al., “Properties of a Si doped as GaN/AlGaN single quantum well”Applied Physics Letter, vol. 67, No. 22, Nov. 1995, pp. 3322-3324.
Nakamura, S. et al., “InGaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices”,Jpn. Appl. Phys., vol. 36, pp. 1568 to 1571 (1997).
Kuramoto, M. et al., “Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on a n-GaN Substrate with a Backside n-Contact”,Jpn. J. Appl. Phys., vol. 38, pp. 184 to 186 (1999).
Abare, A. et al., “Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD”,MRS Internet Journmal of Nitride Semconductor Research, vol. 2, Article 41 (1997).
Han, J. et al., “AlGaN/GaN quantum well ultraviolet might emitting diodes”,Applied Physics Letters, vol. 73, No. 12, pp. 1688 to 1690 (1998).
Nguyen Joseph
Nichia Corporation
Wenderoth , Lind & Ponack, L.L.P.
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