Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2006-10-30

2008-12-09

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257S094000, C257S013000, C257SE33033

Reexamination Certificate

active

07462884

ABSTRACT:
A nitride semiconductor device having excellent ESD tolerance, by preventing uneven distribution of the electric current in the p-side nitride semiconductor layer. The p-side nitride semiconductor layer (40) comprises, from the active layer (30) side, (a) a p-side wide band gap layer (12) containing a p-type impurity and (b) a three-layer structure (15) comprising a first p-side nitride semiconductor layer (16), a second p-side nitride semiconductor layer (17), and a third p-side nitride semiconductor layer (18).

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