Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2005-02-08

2008-03-18

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S086000, C438S046000, C438S047000, C438S077000, C438S094000

Reexamination Certificate

active

07345297

ABSTRACT:
A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order from the n-side contact layer between the n-side contact layer and the active layer, while at least the second n-side layer and the fourth n-side layer each contain an n-type impurity, and the concentration of the n-type impurity in at least the second n-side layer and the fourth n-side layer is higher than the concentration of the n-type impurity in the first n-side layer and the third n-side layer.

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