Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-11-16
2008-07-22
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S101000, C257SE33030
Reexamination Certificate
active
07402838
ABSTRACT:
According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
REFERENCES:
patent: 4750183 (1988-06-01), Takahashi et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5382170 (1995-01-01), Imanishi
patent: 5408105 (1995-04-01), Adachi et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5665977 (1997-09-01), Ishibashi et al.
patent: 5751752 (1998-05-01), Shakuda
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5909040 (1999-06-01), Ohba et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6198112 (2001-03-01), Ishida et al.
patent: 2003/0010993 (2003-01-01), Nakamura et al.
patent: 0731512 (1996-09-01), None
patent: 1 014 455 (2000-06-01), None
patent: 60-145686 (1985-08-01), None
patent: 62193192 (1987-08-01), None
patent: 62-224095 (1987-10-01), None
patent: 03-299480 (1991-10-01), None
patent: 03-257887 (1991-11-01), None
patent: 04-068579 (1992-03-01), None
patent: 04-242985 (1992-08-01), None
patent: 05-082834 (1993-04-01), None
patent: 05-110139 (1993-04-01), None
patent: 05-206513 (1993-08-01), None
patent: 05-259508 (1993-10-01), None
patent: 05-291618 (1993-11-01), None
patent: 05-343739 (1993-12-01), None
patent: 06-005916 (1994-01-01), None
patent: 6033863 (1994-02-01), None
patent: 06-120559 (1994-04-01), None
patent: 06-151966 (1994-05-01), None
patent: 07-249795 (1995-09-01), None
patent: 72763744 (1995-10-01), None
patent: 08-023124 (1996-01-01), None
patent: 08-51251 (1996-02-01), None
patent: 08-056015 (1996-02-01), None
patent: 08-083956 (1996-03-01), None
patent: 08-87468 (1996-04-01), None
patent: 08-228025 (1996-09-01), None
patent: 08-330629 (1996-12-01), None
patent: 08-330630 (1996-12-01), None
patent: 09-036430 (1997-02-01), None
patent: 09-083079 (1997-03-01), None
patent: 09-097921 (1997-04-01), None
patent: 09-116234 (1997-05-01), None
patent: 09-199762 (1997-07-01), None
patent: 09-232629 (1997-09-01), None
patent: 10-004210 (1998-01-01), None
patent: 10-084134 (1998-03-01), None
patent: 09-298341 (1998-05-01), None
patent: 10-135514 (1998-05-01), None
patent: 10-135575 (1998-05-01), None
patent: 10-145000 (1998-05-01), None
patent: 10-145004 (1998-05-01), None
patent: 10-242512 (1998-09-01), None
patent: 10-242569 (1998-09-01), None
patent: 010-335757 (1998-12-01), None
patent: 11-31841 (1999-02-01), None
patent: 11-68155 (1999-03-01), None
patent: 11-195812 (1999-07-01), None
patent: 11-243251 (1999-09-01), None
patent: WO 99/05728 (1999-02-01), None
Shuji Nakamura et al., “InxGa(1-x)N/InyGa(1-y)N supperlattices grown on GaN films,” Journal of Applied Physics, vol. 74, No. 6, pp. 3911-3915, Sep. 15, 1999.
Shuji Nakamura et al., “InGaN Multiquantum-Well-Structure Laser Diode with GaN-AlGaN Modulation-Doped Strained-Layer Superlaticees”, IEEE Journal, vol. 4, No. 3, pp. 483-489.
Takashi Mukai et al., “Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures”, Jpn. J. Appl. Phys. vol. 37 (1998) pp. L479-L481.
Takashi Mukai et al., “InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrwon Gan Substrates”, Jpn. J. Appl. Phys. vol. 37 (1998) pp. L839-L841.
S. Nakamura, “III-V Nitride-Based Blue LDs with Modulation-Doped Strained-Layer Superlattices” Compound Semiconductors, 1997 IEEE International Symposium.
Shuji Nakamura et al., “Present Status of InGaN/GaN/AlgaN-Based Laser Diodes,” Proceedings of the Second International Conference on Nitride Semiconductors, ICNS '97, Oct. 27, 1997.
Shuji Nakamura et al., “InGaN/GaN/AlgaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices,” Jpn. J. Appl. Phys. vol. 36 (1997) pp. L1568-L1571, Pt. 2, 12A.
Nakamura, Shuji et al., “InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate” Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 72, No. 2, Jan. 12, 1998, pp. 211-213.
Nakamura, S., “III-V nitride-based blue LDs with modulation-doped strained-layer superlattices” Compound Semiconductors 1997, Proceedings of the IEEE 24th International Sumposium on Compound Semiconductors, San Diego, Ca, Sep. 8-11, 1997, Institute of Physics Conference Series, New York : IEEE, US, vol. NR. 156, Sep. 8, 1997, pp. 1-4.
Fukuda Yoshikatsu
Ikegami Takeshi
Marui Hiromitsu
Mitani Tomotsugu
Nakagawa Yoshinori
Coleman W. David
Nichia Corporation
Volentine & Whitt PLLC
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