Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2011-04-12

2011-04-12

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S021000, C257SE33033

Reexamination Certificate

active

07923716

ABSTRACT:
There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

REFERENCES:
patent: 6744064 (2004-06-01), Lee et al.
patent: 2004/0161009 (2004-08-01), Edamura et al.
patent: 2005/0199892 (2005-09-01), Cho et al.
patent: 2006/0006375 (2006-01-01), Ou et al.
patent: 2006/0086932 (2006-04-01), Kim et al.
patent: 2006/0108528 (2006-05-01), Qiu
patent: 2007/0272915 (2007-11-01), Nakamura et al.
patent: 2007-081449 (2007-03-01), None

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