Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2008-01-29

2008-01-29

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S079000, C257S095000, C257S098000, C257SE33001

Reexamination Certificate

active

11311242

ABSTRACT:
A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint region is formed with the upper layer of the first electrode and the lower layer of the second electrode. The joint region comprises an element of the platinum group.

REFERENCES:
patent: 5889295 (1999-03-01), Rennie et al.
patent: 6229150 (2001-05-01), Takayama et al.
patent: 6610995 (2003-08-01), Nakamura et al.
patent: 6649941 (2003-11-01), Uemura
patent: 7009218 (2006-03-01), Sugimoto et al.
patent: 2003/0015721 (2003-01-01), Slater et al.
patent: 2000-299528 (2000-10-01), None

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