Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2008-04-29

2008-04-29

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S013000, C257SE33028, C257SE33034

Reexamination Certificate

active

09463643

ABSTRACT:
A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010cm3, and the resistivity can be lowered below 8×10−3Ωcm.

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