Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2007-12-04

2007-12-04

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S200000, C257S472000, C257SE29081, C257SE29140

Reexamination Certificate

active

10996440

ABSTRACT:
A nitride semiconductor device, which includes a III-V Group nitride semiconductor layer being composed of a III Group element consisting of at least one of a group containing of gallium, aluminum, boron and indium and V Group element consisting of at least nitrogen among a group consisting of nitrogen, phosphorus and arsenic, including a first nitride semiconductor layer including the III-V Group nitride semiconductor layer being deposited on a substrate, a second nitride semiconductor layer including the III-V Group nitride semiconductor layer being deposited on the first nitride semiconductor and not containing aluminum and a control electrode making Schottky contact with the second nitride semiconductor layer wherein the second nitride semiconductor layer includes a film whose film forming temperature is lower than the first nitride semiconductor layer.

REFERENCES:
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 2003/0082860 (2003-05-01), Yoshida et al.
patent: 2004/0155260 (2004-08-01), Kuzmik
patent: 2005/0285141 (2005-12-01), Piner et al.
patent: 10-335637 (1998-12-01), None
Y. Ohno, et al.; “International Conference on Nitride Semiconductor, Nara, 2003, Tu-P2.067” (p. 375).
Y. Liu, et al.; Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire;Journal of Crystal Growth259 (2003), pp. 151-157.

Affiliated with

Also associated with

Rating

Nitride semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3875804