Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2007-07-31

2007-07-31

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257S195000, C257S189000

Reexamination Certificate

active

10961033

ABSTRACT:
The nitride semiconductor device according to one embodiment of the present invention comprises: a silicon substrate; a first aluminum gallium nitride (AlxGa1−xN (0≦x≦1)) layer formed as a channel layer on the silicon substrate in an island shape; and a second aluminum gallium nitride (AlyGa1−yN (0≦y≦1, x<y)) layer formed as a barrier layer of a first conductive type or i-type on the first aluminum gallium nitride layer.

REFERENCES:
patent: 5302840 (1994-04-01), Takikawa
patent: 6100549 (2000-08-01), Weitzel et al.
patent: 2003/0151101 (2003-08-01), Rumennik et al.
patent: 2005/0274977 (2005-12-01), Saito et al.
patent: 2003-17409 (2003-01-01), None
Hiroyuki Naoi, et al., “Epitaxial Lateral Overgrowth of GaN on Selected-Area Si(1 1 1) Substrate With Nitrided Si Mask”, Journal of Crystal Growth, vol. 248, 2003, pp. 573-577.
U.S. Appl. No. 11/507,493, filed Aug. 22, 2006, Saito, et al.

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