Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2007-03-20
2007-03-20
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S101000, C257SE33030
Reexamination Certificate
active
09265579
ABSTRACT:
According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
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Fukuda Yoshikatsu
Ikegami Takeshi
Marui Hiromitsu
Mitani Tomotsugu
Nakagawa Yoshinori
Coleman W. David
Nichia Corporation
Volentine Francos & Whitt PLLC
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