Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2007-09-18
2007-09-18
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S198000, C257SE29033
Reexamination Certificate
active
11109858
ABSTRACT:
In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an undoped or n-type aluminum gallium nitride (AlGaN) layer serving as a barrier layer.
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Omura Ichiro
Saito Wataru
Baumeister B. William
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Reames Matthew L.
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