Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2011-07-05

2011-07-05

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S011000, C257S012000, C257SE51010, C438S002000, C438S046000, C438S047000

Reexamination Certificate

active

07973303

ABSTRACT:
A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer.

REFERENCES:
patent: 6635904 (2003-10-01), Goetz et al.
patent: 10-2001-0034578 (2001-04-01), None

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