Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2005-02-01

2005-02-01

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S627000, C257S628000, C257S103000, C257S613000, C257S615000

Reexamination Certificate

active

06849875

ABSTRACT:
The nitride semiconductor device includes: a substrate made of a III-V group compound semiconductor containing nitride; and a function region made of a III-V group compound semiconductor layer containing nitride formed on a main surface of the substrate. The main surface of the substrate tilted from a {0001} plane by an angle in a range of 13° to 90° inclusive.

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patent: 08153931 (1996-06-01), None
patent: 09129974 (1997-05-01), None
patent: 10190059 (1998-07-01), None

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