Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2005-01-04
2005-01-04
Baumeister, Bradley (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S097000, C257S103000, C257S190000, C257S615000
Reexamination Certificate
active
06838705
ABSTRACT:
The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layer7is formed of a multiple quantum well structure containing InaGa1−aN (0≦a<1). The p-cladding layer8is formed on said active layer containing the p-type impurity. The p-cladding layer8is made of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layer8is made of single-layered layer made of AlbGa1−bN (0≦b≦1). A low-doped layer9is grown on the p-cladding layer8having a p-type impurity concentration lower than that of the p-cladding layer8.A p-contact layer is grown on the low-doped layer9having a p-type impurity concentration higher than those of the p-cladding layer8and the low-doped layer9.
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Baumeister Bradley
Nichia Corporation
Volentine Francos & Whitt PLLC
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