Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

2005-03-29

2005-03-29

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

C257S102000, C257S103000, C257S745000

Reexamination Certificate

active

06872986

ABSTRACT:
A nitride semiconductor element exhibiting low leakage current and high ESD tolerance includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconductor layers, the p-side layer including a p-type contact layer as a layer for forming p-ohmic electrodes, the p-type contact layer being formed by laminating p-type nitride semiconductor layers and n-type nitride semiconductor layers in an alternate manner.

REFERENCES:
patent: 6657300 (2003-12-01), Goetz et al.
patent: 1 063 711 (2000-12-01), None
patent: 2000-101142 (2000-04-01), None
patent: 2000-232237 (2000-08-01), None
patent: 2001-148507 (2001-05-01), None
patent: WO 0059046 (2000-03-01), None

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