Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

1996-11-06

1999-09-28

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257196, 257201, 257615, H01L 2906

Patent

active

059593075

ABSTRACT:
A nitride semiconductor device has a nitride semiconductor layer structure. The structure includes an active layer of a quantum well structure containing an indium-containing nitride semiconductor. A first nitride semiconductor layer having a band gap energy larger than that of the active layer is provided in contact with the active layer. A second nitride semiconductor layer having a band gap energy smaller than that of the first layer is provided over the first layer. Further, a third nitride semiconductor layer having a band gap energy larger than that of the second layer is provided over the second layer.

REFERENCES:
patent: 4862471 (1989-08-01), Pankove
patent: 5642376 (1997-06-01), Albright et al.
patent: 5646953 (1997-07-01), Naito et al.
patent: 5684309 (1997-11-01), McIntosh et al.

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