Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2008-04-29
2008-04-29
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C257S615000, C257SE33023, C257SE33025, C257SE33028, C257SE21085
Reexamination Certificate
active
11492924
ABSTRACT:
An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof.A first metal film is formed on a P-type conductive nitride semiconductor formed on a substrate, and then, a film (WOx) made of tungsten oxide is formed in superimposition, followed by annealing.
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Tanaka Shigehisa
Terano Akihisa
Antonelli, Terry Stout & Kraus, LLP.
Dang Trung
Opnext Japan, Inc.
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