Nitride semiconductor and method for manufacturing thereof

Details Nitride semiconductor and method for manufacturing thereof Nitride semiconductor and method for manufacturing thereof

2006-10-05

2010-11-16

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S077000, C257S078000, C257S079000, C257S103000, C257SE21108, C257SE29089, C257SE33032

Reexamination Certificate

active

07834343

ABSTRACT:
A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.

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patent: 2006/0006399 (2006-01-01), Nakamura et al.
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