Nitride semiconductor and fabrication method thereof

Details Nitride semiconductor and fabrication method thereof Nitride semiconductor and fabrication method thereof

2003-08-19

2008-05-06

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000, C438S093000, C257S079000, C257S103000, C257SE21365, C257SE21366

Reexamination Certificate

active

07368309

ABSTRACT:
The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in any one of a group of three-layered structure AlyInxGa1−(x+y)N/InxGa1−xN/GaN where 0≦x≦1 and 0≦y≦1, two-layered structure InxGa1−xN/GaN where 0≦x≦1 and superlattice structure of InxGa1−xN/GaN where 0≦x≦1; and a GaN-based single crystalline layer.

REFERENCES:
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6459100 (2002-10-01), Doverspike et al.
patent: 6657234 (2003-12-01), Tanizawa
patent: 7193236 (2007-03-01), Lee
patent: 2001/0035531 (2001-11-01), Kano et al.
patent: 2002/0125492 (2002-09-01), Shakuda
patent: 7-302929 (1995-11-01), None
patent: 9-199759 (1997-07-01), None
patent: 9-293897 (1997-11-01), None
patent: 10-173220 (1998-06-01), None
patent: 11-238935 (1999-08-01), None
patent: 2001-7397 (2001-01-01), None
patent: 2001-274376 (2001-10-01), None

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