Nitride selective, anisotropic Cl.sub.2 /He etch process

Details Nitride selective, anisotropic Cl.sub.2 /He etch process Nitride selective, anisotropic Cl.sub.2 /He etch process

1997-03-20

1999-09-14

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438744, H01L 213065

Patent

active

059522461

ABSTRACT:
An etch process utilizing Cl.sub.2 /He chemistry for use in a silicon integrated circuit manufacturing process. The etch is a highly nitride selective, anisotropic etch. The manufacturing process in which the Cl.sub.2 /He etch is employed includes steps of oxidizing a surface of a silicon wafer; depositing a first polycrystalline silicon on the wafer surface; depositing a silicon nitride-silicon dioxide layer on the wafer surface; depositing a silicon nitride spacer on the wafer; etching with Cl.sub.2 /He chemistry to remove essentially all of the silicon nitride spacer except for bitline remnants (i.e., stringers) of the silicon nitride spacer atop silicon dioxide; depositing a second polycrystalline silicon atop the etched wafer; and selectively removing portions of said second polycrystalline silicon from the wafer. The bitline remnants of the silicon nitride, i.e., stringers, are not conductive. The Cl.sub.2 /He chemistry etch process essentially eliminates trenches in the product silicon integrated circuit device.

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