Nitride read-only memory cell and method of manufacturing...

Details Nitride read-only memory cell and method of manufacturing... Nitride read-only memory cell and method of manufacturing...

2007-01-05

2010-11-16

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C438S149000, C438S158000, C438S216000, C438S258000, C438S261000, C257SE21209, C257SE21618

Reexamination Certificate

active

07834382

ABSTRACT:
A nitride read-only memory cell and a method of manufacturing the same are provided. First, a substrate is provided, and a first oxide layer is formed on the substrate. Next, a nitride layer is deposited on the first oxide layer via a first gas and a second gas. The flow ratio of the first gas to the second gas is 2:1. After that, a second oxide layer is formed on the nitride layer. Then, a bit-line region is formed at the substrate. Afterward, a gate is formed on the second oxide layer. The first oxide layer, nitride layer, the second oxide layer and the gate compose a stack structure of the cell. Further, a spacer is formed on the side-wall of the stack structure.

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