Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Patent
1988-03-29
1989-11-21
Griffin, Donald A.
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
29 2542, 357 54, H01G 700, H01G 406, H01L 2934
Patent
active
048826499
ABSTRACT:
An integrated circuit capacitor is disclosed which has improved leakage and storage characteristics. The dielectric material for the capacitor consists of a first layer of silicon nitride adjacent the lower plate, such as a silicon substrate, upon which a layer of silicon dioxide is formed. A second layer of silicon nitride is formed over the silicon dioxide layer, above which the second plate is formed. The layer of silicon dioxide may be formed by the partial oxidation of the first silicon nitride layer. The capacitor may be a planar capacitor, may be formed in a trench, or may be formed between two layers above the surface of the substrate.
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Yau, "Determination of the Fowler-Nordheim Tunneling Barrier from Nitride to Oxide in Oxide: Nitride Dual Dielectric".
Yau et al., "Effects of Barrier Asymmetry on the Electrical Properties of Thin Oxide: Nitride Dielectrics," International Symposium on VLST Technology, Systems and Applications, Taipei, Taiwan (May 1985), pp. 295-299.
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Chen Ih-Chin
Doering Robert R.
Shen Bing W.
Anderson Rodney M.
Griffin Donald A.
Sharp Melvin
Texas Instruments Incorporated
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