Nitride micro light emitting diode with high brightness and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257S090000, C257S096000, C257SE33012, C257SE33023, C257SE33025, C257SE33027

Reexamination Certificate

active

07906787

ABSTRACT:
The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurality of micro-sized luminous pillars10are formed in a substrates, a gap filling material such as SiO2, Si3N4, DBR(ZrO2/SiO2HfO2/SiO2), polyamide or the like is filled in gaps between the micro-sized luminous pillars, a top surface11of the luminous pillar array and the gap filling material is planarized through a CMP processing, and then a transparent electrode6having a large area is formed thereon, so that all the luminous pillars can be driven at the same time. In addition, the present invention provides a nitride micro LED with high brightness in which uniformity in formation of electrodes on the micro-sized luminous pillars array is enhanced by employing a flip-chip structure.

REFERENCES:
patent: 5779924 (1998-07-01), Krames et al.
patent: 2004/0206962 (2004-10-01), Erchak et al.
patent: 10-294533 (1998-11-01), None
patent: 2001-24222 (2001-01-01), None
patent: 2001-308380 (2001-11-01), None
patent: 2004-8962 (2004-01-01), None
WIPO, International Search Report for International Application No. PCT/KR2003/001600.

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