Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-01-30
2007-01-30
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29251
Reexamination Certificate
active
10772882
ABSTRACT:
A nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed on the channel layer. At least one energy barrier opposes movement of carriers away from the channel layer. The energy barrier may comprise an electron source layer in proximity with a hole source layer which generate an associated electric field directed away from the channel. An energy barrier according to some embodiments may provide a built-in potential barrier in excess of about 0.5 eV. Method embodiments are also disclosed.
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United St
Cree Inc.
Jackson Jerome
Myers Bigel & Sibley Sajovec, PA
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