Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-10-16
1997-04-01
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257347, 257411, 257640, H01L 2904, H01L 2358
Patent
active
056169337
ABSTRACT:
A thin film transistor includes a thin film transistor body above a gate electrode. The thin film transistor body is hydrogenated to prevent the transistor body from apparently capturing and releasing electrons. The transistor body itself is coated with an upper and lower layer of silicon nitride to prevent the trapped hydrogen from migrating out of the transistor body over time. This is formed by depositing a layer of silicon dioxide, then a layer of silicon nitride over the gate electrode, followed by deposition of a polysilicon layer which is then etched to form the transistor body. This is hydrogenated after threshold adjustment implant and source/drain implant and subsequently coated with an upper sealing layer of silicon nitride. This enables the establishment of relatively high Ion/Ioff ratio and improves the reliability of the transistor.
REFERENCES:
patent: 5311040 (1994-05-01), Hiramatsu et al.
patent: 5440168 (1995-08-01), Nishimura et al.
Mitra, Uday, et al., Mechanism of Plasma Hydrogenation of Polysilicon Thin Film Transistors, J. Electrochem. Soc., vol. 138, No. 11, Nov. 1991, pp. 3420-3424.
Wu, I-Wei, et al., Effects of Trap-State Density Reduction by Plasma Hydrogenation in Low-Temperature Polysilicon TFT, IEEE Electron Device Letters, vol. 10, No. 3, Mar. 1989, pp. 123-125.
Rodder, M., et al., Effects of H + Implant Dose and Film Deposition Conditions on Polycrystalline-Si MOSFET Characteristics, IEEE Electron Device Letters, vol. EDL-8, No. 1, Jan. 1987, pp. 27-29.
Sony Corporation
Sony Electronics Inc.
Tran Minh-Loan
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