Nitride compound semiconductor, nitride compound...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Reexamination Certificate

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C438S036000, C438S037000, C438S046000, C438S486000, C438S797000

Reexamination Certificate

active

06881601

ABSTRACT:
A nitride compound semiconductor light-emitting device having a stack of layers including an active layer for a light emitting device and a method of manufacturing the device is disclosed. The method includes the steps of growing a first layer on a substrate at a first temperature to obtain an incomplete crystalline structure including both indium and aluminum and having the composition expressed as InXAlYGa1-X-YN(0≦X≦1, 0≦Y≦1). The method grows a cap layer on the first layer to cover the first layer, with growth of the cap layer proceeding at a second temperature substantially equal to or below the first temperature. The first layer is heat treated at a third temperature above the first temperature to cause the incomplete crystalline structure to crystallize and to create areas of differing compositions, thus changing the first layer to an active layer. The material of the cap layer is selected to be heat stable during the heat-treating step.

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