Nitride compound semiconductor light emitting element and its ma

Details Nitride compound semiconductor light emitting element and its ma Nitride compound semiconductor light emitting element and its ma

1999-03-03

1999-11-23

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257 94, 257745, 257748, 372 43, H01L 3300

Patent

active

059905000

ABSTRACT:
A nitride compound semiconductor light emitting element is made by stacking a metal layer made of one of elements: palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu), and another metal layer made of one of elements: titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W) and magnesium (Mg), to increase the adhesive strength of its electrodes with a semiconductor layer, reduce the contact resistance of the electrodes to improve the ohmic characteristics, and improve the external quantum efficiency by combination of thin-film metals with a transparent electrode.

REFERENCES:
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5786603 (1998-07-01), Rennie et al.

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