Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2008-04-01
2008-04-01
Mulpuri, Savitri (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257SE33028
Reexamination Certificate
active
07352012
ABSTRACT:
A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
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Araki Masahiro
Ogawa Atsushi
Tsuda Yuhzoh
Ueta Yoshihiro
Yuasa Takayuki
Morrison & Foerster / LLP
Mulpuri Savitri
Sharp Kabushiki Kaisha
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