Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-12-20
2011-10-18
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S033000, C438S462000, C257SE21238, C148SDIG028
Reexamination Certificate
active
08039283
ABSTRACT:
The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure40supported by an upper face of the substrate. First, a wafer1to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure40are grown on the wafer1. By cleaving the wafer1and the semiconductor layers, a cleavage plane in the multilayer structure40is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
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International Search Report for corresponding Application No. PCT/JP2006/325335 dated Mar. 6, 2007.
Form PCT/ISA/237 and partial English translation.
Hasegawa Yoshiaki
Matsuda Yoshiaki
Yamada Atsushi
Yokogawa Toshiya
Panasonic Corporation
Renner , Otto, Boisselle & Sklar, LLP
Wilczewski Mary
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