Nitride compound semiconductor element

Details Nitride compound semiconductor element Nitride compound semiconductor element

2007-02-13

2007-02-13

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S011000, C257S014000, C257S015000, C257S020000, C257S024000, C257S051000, C257S066000, C257S067000, C257S069000, C257S070000, C257S075000, C257S094000, C257S096000, C257S097000, C257S101000, C257S102000, C257S103000, C257S184000, C257S189000, C257S615000

Reexamination Certificate

active

10773297

ABSTRACT:
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crystalline layer formed on said first single crystalline layer, said second single crystalline layer being made of AlxGa1-xN (0.8≦x≦0.97) and having a thickness of equal to or more than 0.3 μm and equal to or less than 6 μm; and a device structure section of a nitride semiconductor formed on said second single crystalline layer.

REFERENCES:
patent: 4792958 (1988-12-01), Ohba et al.
patent: 4809287 (1989-02-01), Ohba et al.
patent: 4835117 (1989-05-01), Ohba et al.
patent: 4893313 (1990-01-01), Hatakoshi et al.
patent: 4910743 (1990-03-01), Ohba et al.
patent: 4928285 (1990-05-01), Kushibe et al.
patent: 4949349 (1990-08-01), Ohba et al.
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5036521 (1991-07-01), Hatakoshi et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5076800 (1991-12-01), Milnes et al.
patent: 5079184 (1992-01-01), Hatano et al.
patent: 5103271 (1992-04-01), Izumiya et al.
patent: 5146465 (1992-09-01), Khan et al.
patent: 5168077 (1992-12-01), Ashizawa et al.
patent: 5228044 (1993-07-01), Ohba
patent: 5235194 (1993-08-01), Izumiya et al.
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5317167 (1994-05-01), Izumiya et al.
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5617438 (1997-04-01), Hatano et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5665467 (1997-09-01), Nakayama et al.
patent: 5679965 (1997-10-01), Schetzina
patent: 5693963 (1997-12-01), Fujimoto et al.
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5875052 (1999-02-01), Shmagin et al.
patent: 5909040 (1999-06-01), Ohba et al.
patent: 5915164 (1999-06-01), Taskar et al.
patent: 5923058 (1999-07-01), Agarwal et al.
patent: 5923953 (1999-07-01), Goldenberg Barany et al.
patent: 5929466 (1999-07-01), Ohba et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 5990495 (1999-11-01), Ohba
patent: 5998810 (1999-12-01), Hatano et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6165812 (2000-12-01), Ishibashi et al.
patent: 6218293 (2001-04-01), Kraus et al.
patent: 6242764 (2001-06-01), Ohba et al.
patent: 6259122 (2001-07-01), Ota et al.
patent: 6281522 (2001-08-01), Ishibashi et al.
patent: 6306672 (2001-10-01), Kim
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 6541798 (2003-04-01), Koike et al.
patent: 6555846 (2003-04-01), Watanabe et al.
patent: 6607595 (2003-08-01), Manabe et al.
patent: 6661822 (2003-12-01), Kubota et al.
patent: 6680957 (2004-01-01), Koike et al.
patent: 2001/0010941 (2001-08-01), Morita
patent: 2001/0038656 (2001-11-01), Takeuchi et al.
patent: 2001/0048114 (2001-12-01), Morita et al.
patent: 2001/0055871 (2001-12-01), Takeya et al.
patent: 2002/0001864 (2002-01-01), Ishikawa et al.
patent: 2002/0013042 (2002-01-01), Morkoc
patent: 2002/0014629 (2002-02-01), Shibata et al.
patent: 2002/0060326 (2002-05-01), Manabe et al.
patent: 2003/0109076 (2003-06-01), Senda et al.
patent: 07/235692 (1995-09-01), None
patent: 2000-31588 (2000-01-01), None
patent: 2000-031588 (2000-01-01), None

Affiliated with

Also associated with

Rating

Nitride compound semiconductor element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nitride compound semiconductor element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride compound semiconductor element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3835611