Nitride compound semiconductor device including organic...

Details Nitride compound semiconductor device including organic... Nitride compound semiconductor device including organic...

2011-08-30

2011-08-30

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

Reexamination Certificate

active

08008655

ABSTRACT:
A nitride compound semiconductor device includes a semiconductor layer including a group III nitride compound semiconductor, source and drain electrodes provided on the semiconductor layer, an insulating film provided on the semiconductor layer between the source electrode and the drain electrode, an organic semiconductor layer in contact with the semiconductor layer at an opening provided for the insulating film, and a gate electrode provided on the organic conductive layer at the opening.

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patent: 2004-214471 (2004-07-01), None

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