Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
2006-02-21
2010-02-16
Speer, Timothy M (Department: 1794)
Stock material or miscellaneous articles
Composite
Of inorganic material
C117S952000
Reexamination Certificate
active
07662488
ABSTRACT:
A nitride-based semiconductor substrate having a diameter of 25 mm or more, a thickness of 250 micrometers or more, and an optical absorption coefficient of less than 7 cm−1to light with a wavelength of 380 nm or more. The nitride-based semiconductor substrate is made by the HVPE method that uses gallium chloride obtained by reacting a Ga melt with a hydrogen chloride gas. The Ga melt is contacted with the hydrogen chloride gas for one minute or more to produce the gallium chloride.
REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 6812051 (2004-11-01), Usui et al.
patent: 2002/0152951 (2002-10-01), Tsvetkov et al.
patent: 2002/0168844 (2002-11-01), Kuramoto et al.
patent: 2004/0072410 (2004-04-01), Motoki et al.
patent: 2004/0245535 (2004-12-01), D'Evelyn
patent: 2005/0009310 (2005-01-01), Vaudo et al.
patent: 2005/0092234 (2005-05-01), Motoki et al.
patent: 04-297023 (1992-10-01), None
patent: 2000-012900 (2000-01-01), None
patent: 2005-213075 (2005-08-01), None
patent: 2004/061923 (2004-07-01), None
Oshima et al. “Preparation of Free standing GaN wafers by HVPE with Void assisted separation” Jpn. J. Appl. Phys. vol. 42 (2003) pp. (L1-L3). Part 2. Express letters.
Oshima et al. “Thermal and optical properties of Bulk GaN crystals fabricated through HVPE with Void Assisted Separation”. Journal of Applied Physics. vol. 98. Issue 10. Article 103509. (2005).
Motoki et al., “Growth and characterization of freestanding GaN substrates”, Journal of Crystal Growth 237-239 (2002) pp. 912-921.
Chinese Office Action dated Dec. 21, 2007, with English-language translation.
Chinese Office Action dated May 30, 2008 with English translation.
Japanese Office Action dated Nov. 17, 2009 with English translation.
Hitachi Cable Ltd.
Langman Jonathan C
McGinn IP Law Group PLLC
Speer Timothy M
LandOfFree
Nitride-based semiconductor substrate and method of making... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride-based semiconductor substrate and method of making..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride-based semiconductor substrate and method of making... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4227668