Nitride-based semiconductor substrate and method of making...

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Reexamination Certificate

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C117S952000

Reexamination Certificate

active

07662488

ABSTRACT:
A nitride-based semiconductor substrate having a diameter of 25 mm or more, a thickness of 250 micrometers or more, and an optical absorption coefficient of less than 7 cm−1to light with a wavelength of 380 nm or more. The nitride-based semiconductor substrate is made by the HVPE method that uses gallium chloride obtained by reacting a Ga melt with a hydrogen chloride gas. The Ga melt is contacted with the hydrogen chloride gas for one minute or more to produce the gallium chloride.

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