Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-11-22
2005-11-22
Porta, David (Department: 2878)
Coherent light generators
Particular active media
Semiconductor
C372S045013
Reexamination Certificate
active
06967981
ABSTRACT:
A nitride based resonant cavity semiconductor structure has highly reflective mirrors on opposite sides of the active layer. These highly reflective mirrors can be distributed Bragg reflectors or metal terminated layer stacks of dielectric materials. The nitride based resonant cavity semiconductor structure can be vertical cavity surface emitting laser (VCSEL), a light emitting diode (LED), or a photodetector (PD), or a combination of these devices.
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Bour David P.
Chua Christopher L.
Kneissl Michael A.
Monbleau Davienne
Porta David
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