Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-02-15
2005-02-15
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S101000, C257S102000, C257S103000, C257S087000, C257S014000, C257S023000, C257S611000
Reexamination Certificate
active
06855959
ABSTRACT:
A nitride based semiconductor photo-luminescent device has an active layer having a quantum well structure. The active layer has both a high dislocation density region and a low dislocation density region that is lower in dislocation density than the high dislocation density region, wherein the low dislocation density region includes a current injection region into which a current is injected, and the active layer is less than 1×1018cm−3in impurity concentration.
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Applied Physics, V. 68, No. 7, 1999, pp. 793-796.
Kuramoto Masaru
Nido Masaaki
Yamaguchi Atsushi
Flynn Nathan J.
Forde Remmon R.
NEC Corporation
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