Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Zandra (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S039000, C438S040000, C438S041000, C438S046000, C257SE21093, C257SE21097, C257SE21117
Reexamination Certificate
active
07977134
ABSTRACT:
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.
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Kim Dong Joon
Kim Hyun Kyung
Lee Hyuk Min
Shin Hyoun Soo
McDermott Will & Emery LLP
Samsung LED Co., Ltd.
Smith Zandra
Yang Minchul
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