Nitride-based semiconductor light-emitting diode and...

Details Nitride-based semiconductor light-emitting diode and... Nitride-based semiconductor light-emitting diode and...

2005-03-18

2011-12-13

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S213000, C257S256000, C257SE33065, C257SE33068

Reexamination Certificate

active

08076679

ABSTRACT:
A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.

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