Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2005-03-18
2011-12-13
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S213000, C257S256000, C257SE33065, C257SE33068
Reexamination Certificate
active
08076679
ABSTRACT:
A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.
REFERENCES:
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5793054 (1998-08-01), Nido
patent: 5909040 (1999-06-01), Ohba et al.
patent: 5929466 (1999-07-01), Ohba et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6340824 (2002-01-01), Komoto et al.
patent: 2001/0048064 (2001-12-01), Kitani
patent: 2002/0079506 (2002-06-01), Komoto et al.
patent: 2002/0088985 (2002-07-01), Komoto et al.
patent: 2002/0179923 (2002-12-01), Morita et al.
patent: 2003/0022028 (2003-01-01), Koike et al.
patent: 2003/0080341 (2003-05-01), Sakano et al.
patent: 2003/0132454 (2003-07-01), Lell et al.
patent: 2003/0168653 (2003-09-01), Tsujimura et al.
patent: 2003/0205783 (2003-11-01), Ishida
patent: 2004/0041156 (2004-03-01), Tsuda et al.
patent: 2004/0051105 (2004-03-01), Tsuda et al.
patent: 2004/0147134 (2004-07-01), Hasegawa et al.
patent: 2005/0087753 (2005-04-01), D'Evelyn et al.
patent: 2005/0269584 (2005-12-01), Hasegawa et al.
patent: 2006/0219998 (2006-10-01), Sato et al.
patent: 11-214798 (1999-08-01), None
patent: 11-214798 (1999-08-01), None
patent: 11-233893 (1999-08-01), None
patent: 2000-174341 (2000-06-01), None
patent: 2000-174341 (2000-06-01), None
patent: 2001-60719 (2001-03-01), None
patent: 2001-168385 (2001-06-01), None
patent: 2001-345476 (2001-12-01), None
patent: 2002-261014 (2002-09-01), None
patent: 2002-329896 (2002-11-01), None
patent: 2002-329896 (2002-11-01), None
patent: 2003-31552 (2003-01-01), None
patent: 2003-031552 (2003-01-01), None
patent: 2003-101160 (2003-04-01), None
Chinese Office Action, with English translation, issued in Japanese Patent Application No. CN 2005-80008768.2 dated on May 23, 2008.
Notice of Reasons for Rejection, with English translation thereof, issued in Japanese Patent Application No. 2004-079873, mailed Dec. 14, 2010.
Kamei Hidenori
Kinoshita Yoshitaka
McDermott Will & Emery LLP
Panasonic Corporation
Vu Hung
Webb Vernon P
LandOfFree
Nitride-based semiconductor light-emitting diode and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride-based semiconductor light-emitting diode and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride-based semiconductor light-emitting diode and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4304548