Nitride-based semiconductor light emitting diode

Details Nitride-based semiconductor light emitting diode Nitride-based semiconductor light emitting diode

2011-08-09

2011-08-09

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S013000, C257S103000, C257SE33025, C257SE33030, C257SE33034, C257SE33062, C257SE33063

Reexamination Certificate

active

07994525

ABSTRACT:
A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-electrode pad formed on the transparent electrode, the p-electrode pad being spaced from the outer edge line of the p-type nitride semiconductor layer by 50 to 200 μm; and an n-electrode pad formed on the n-type nitride semiconductor layer.

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