Nitride-based semiconductor light-emitting device and method...

Details Nitride-based semiconductor light-emitting device and method... Nitride-based semiconductor light-emitting device and method...

2007-01-04

2009-06-02

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S039000, C438S046000, C257S013000, C257S094000

Reexamination Certificate

active

07541206

ABSTRACT:
A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

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*Office Action issued in Korean Intellectual Property Office on Oct. 27, 2008.

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