Nitride-based semiconductor light-emitting device and method...

Details Nitride-based semiconductor light-emitting device and method... Nitride-based semiconductor light-emitting device and method...

2006-10-03

2006-10-03

Menefee, James (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

07116693

ABSTRACT:
A nitride-based semiconductor light-emitting device capable of stabilizing transverse light confinement is obtained. This nitride-based semiconductor light-emitting device comprises an emission layer, a cladding layer, formed on the emission layer, including a first nitride-based semiconductor layer and having a current path portion and a current blocking layer, formed to cover the side surfaces of the current path portion, including a second nitride-based semiconductor layer, while the current blocking layer is formed in the vicinity of the current path portion and a region having no current blocking layer is included in a region not in the vicinity of the current path portion. Thus, the width of the current blocking layer is reduced, whereby strain applied to the current blocking layer is relaxed. Consequently, the thickness of the current blocking layer can be increased, thereby stabilizing transverse light confinement.

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Japanese Office Action for Corresponding Japanese Patent Application issued Sep. 21, 2005.
Japanese Office Action for Corresponding Japanese Patent Application No. 2001-240716, Dispatched on Mar. 28, 2006.

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