Nitride-based semiconductor light emitting device and method...

Details Nitride-based semiconductor light emitting device and method... Nitride-based semiconductor light emitting device and method...

2011-01-18

2011-01-18

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S478000

Reexamination Certificate

active

07871845

ABSTRACT:
Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.

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patent: 2007/0184637 (2007-08-01), Haskell et al.
patent: 2000-021789 (2000-01-01), None
patent: 10-2006-0093528 (2006-08-01), None
Office Action dated Apr. 23, 2008 for corresponding Korean Application No. 10-2006-0085897 and English translation thereof.

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