Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-12-26
2006-12-26
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S097000, C257S098000, C257S099000, C257S100000, C257S101000, C257S102000
Reexamination Certificate
active
07154125
ABSTRACT:
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
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Chinese Office Action mailed on Aug. 6, 2004, for Patent Application No. 031232361, 15 pages.
Fudeta Mayuko
Hata Toshio
Kimura Daigaku
Koide Norikatsu
Flynn Nathan
Sefer Ahmed N.
Sharp Kabushiki Kaisha
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