Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-07-05
2005-07-05
Flynn, Nathan J. (Department: 2826)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S044010, C372S046012, C257S079000, C257S103000
Reexamination Certificate
active
06914922
ABSTRACT:
A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.
REFERENCES:
patent: 4961197 (1990-10-01), Tanaka et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5812576 (1998-09-01), Bour
patent: 5886367 (1999-03-01), Udagawa
patent: 5974069 (1999-10-01), Tanaka et al.
patent: 6069394 (2000-08-01), Jenkner et al.
patent: 6172382 (2001-01-01), Nagahama et al.
patent: 6177359 (2001-01-01), Chen et al.
patent: 6252894 (2001-06-01), Sasanuma et al.
patent: 6266355 (2001-06-01), Sverdlov
patent: 6377597 (2002-04-01), Okumura
patent: 11-251685 (1999-09-01), None
patent: WO98/39827 (1998-09-01), None
M. Levinshteyn et al, “Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe”, John Wiley & Sons (New York 2001; ISBN 0-471-35827-4), particularly pp. 16, 39 and 58.
S. Nakamura et al, “The Blue Laser Diode—The Complete Story”, Springer Verlag (Berlin, Heidelberg, New York), Second Revised and Enlarged Edition (2000), ISBN: 3-540-66505-6; in particular pp. 161-162.
S. Nakamura, “Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes”, Publ.: Taylor and Francis (New York, 2000, ISBN: 0-7484-0836-3), in particular: p. 357.
Peng, T., and Piprek, J., “Refractive Index of AIGaInN Alloys”, Electronics Letters, 21stNov. 1996, vol. 32, Issue 24.
Steigerwald, D., et al, “III-V Nitride Semiconductors for High-Performance Blue and Green Light-Emitting Devices”, JOM, vol. 49, Issue 9, pp. 18-23 (1997).
Jpn. J. Appl. Phys., vol. 38, Part 2, No. 2B (1999), pp. L184-L186.
The Notice of Reasons for Refusal in the Counter part Japanese Application (JP2001-204810) and its translation thereof.
Goto Takenori
Hayashi Nobuhiko
Kano Takashi
Nomura Yasuhiko
Flynn Nathan J.
Mondt Johannes
Sanyo Electric Co,. Ltd.
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