Nitride-based semiconductor light-emitting device

Details Nitride-based semiconductor light-emitting device Nitride-based semiconductor light-emitting device

2003-09-17

2009-02-03

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S098000, C257S744000, C257S745000, C257SE33005, C257SE33028, C257SE33064

Reexamination Certificate

active

07485902

ABSTRACT:
A nitride-based semiconductor light-emitting device capable of improving luminous efficiency by reducing light absorption loss in a contact layer is provided. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an active layer, formed on the first nitride-based semiconductor layer, consisting of a nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the active layer, an undoped contact layer formed on the second nitride-based semiconductor layer and an electrode formed on the undoped contact layer.

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