Nitride based semiconductor light-emitting device

Details Nitride based semiconductor light-emitting device Nitride based semiconductor light-emitting device

2007-02-20

2007-02-20

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000

Reexamination Certificate

active

10731336

ABSTRACT:
Nitride based semiconductor light-emitting devices are provided with a sufficiently low contact resistance p-type electrode. The nitride based semiconductor light-emitting devices include a p-type GaN contact layer, protrusions with fine recesses (uneven portions) formed on a surface of the p-type GaN contact layer, and a p-type electrode formed on the uneven portions.

REFERENCES:
patent: 2002-016312 (2002-01-01), None

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