Nitride based semiconductor light-emitting device

Details Nitride based semiconductor light-emitting device Nitride based semiconductor light-emitting device

2005-12-20

2005-12-20

Hu, Shouxiang (Department: 2811)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S044010, C257S014000, C257S015000, C257S079000

Reexamination Certificate

active

06977952

ABSTRACT:
The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InxAlyGa1−x−yN (0<x<1, 0≦y≦0.2), wherein a threshold mode gain of each of the at least quantum well is not more than 12 cm−1, and wherein a standard deviation of a microscopic fluctuation in a band gap energy of the at least luminescent layer is in the range of 75 meV to 200 meV.

REFERENCES:
patent: 6294440 (2001-09-01), Tsuda et al.
patent: 6459096 (2002-10-01), Razeghi
patent: 6555403 (2003-04-01), Domen et al.
patent: 6642546 (2003-11-01), Kuramoto et al.
patent: 2002/0030200 (2002-03-01), Yamaguchi et al.
patent: 10-12969 (1998-01-01), None
patent: A 11-307866 (1999-11-01), None
patent: A 11-340580 (1999-12-01), None
patent: 2000-58462 (2000-02-01), None
Shuji Nakamura, “Current Status and Future Prospects of InGaN-Based Laser Diodes,” JSAP International, Jan. 2000, Tokushima, Japan, pp. 5-17.
Masaru Kuramoto et al., “Towards a Durable InGaN MQW LD—Room Temperature CW Operation of InGaN MQW Laser,” NEC Res. & Develop., V. 41, Jan. 2000, pp. 74-86.
Shuji Nakamura et al., “InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices,” Jpn. J. Appl. Phys., V. 36, 1997, pp. L1568-L1571.
Akira Usui et al., “Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy,” Jpn. J. Appl. Phys., V. 36, 1997, pp. L899-L902.
Shigefusa Chichibu, “Spatially Resolved Cathodoluminescence Spectra of InGaN Quantum Wells,” Appl. Phys. Lett. 71, 1997, pp. 2346-2348.
W. W. Chow et al., “Microscopic Theory of Gain for an InGaN/AlGaN Quantum Well Laser,” Appl. Phys. Lett. 71, 1997, pp. 2608-2610.
A. Atsushi Yamaguchi et al., “Optical Recombination Processes in High-Quality GaN Films and InGaN Quantum Wells Grown on Facet-Initiated Epitaxial Lateral Overgrown GaN Substrates,” Jpn. J. Apppl. Phys., V. 39, 2000, pp. 2402-2406.
G. Martin et al., “Valence-Band Discontinuities of Wurtzite GaN, A1N, and InN Heterojunctions Measured by X-Ray Photoemission Spectroscopy,” Appl. Phys. Lett. 68, 1996, pp. 2541-2543.
Domen et al., “Optical gain in GaN Based Semiconductors”, Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devices, 1997 Digest of the IEEE/LEOS Summer Topical M, Aug. 11, 1997, pp. 35-36, XP010243183.
Duxbury et al., “Indium segregation in InGaN quantum-well structures”, Applied Physics Letters, American Institue of Physics, New York, Mar. 20, 2000, pp. 1600-1602, XP012024880.
Binet et al., “Optical pumping in nitride cavities with etched mirror facets”, Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, Dec. 18, 1997, pp. 183-187, XP004119130.
Nakamura, “Ingan-based blue laser diodes”, IEEE Journal of Selected Topics in Quantum Electronics, IEEE Service Center, US, Jun. 1, 1997, pp. 712-718, XP000727336.
Fischer et al., “Direct imaging of the spectral emission characteristic of an InGaN/GaN-ultraviolet light-emitting diode by highly spectrally and spatially resovled electroluminescence and photoluminescence microscopy”, Applied Physics Letters, American Institute of Physics, New York, US, Nov. 29, 1999, pp. 3440-3442, XP012024140.
Domen et al., “Interwell inhomogeneity of carrier injection in InGaN/GaN/AIGaN multiquantum well lasers”, Applied Physics Letters, American Institute of Physics, New York, US, vol. 73, No. 19, Nov. 9, 1998, pp. 2775-2777, XP012021335.

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