Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-04-12
2011-04-12
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
07924898
ABSTRACT:
One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (0001). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
REFERENCES:
patent: 5923690 (1999-07-01), Kume et al.
patent: 6849875 (2005-02-01), Ishida
patent: 7750363 (2010-07-01), Kamikawa et al.
patent: 2007/0087460 (2007-04-01), Sakong et al.
patent: 2007/0177646 (2007-08-01), Sogabe et al.
patent: 2008/0181275 (2008-07-01), Matsuyama et al.
patent: 2008/0298411 (2008-12-01), Hata
patent: 08-213692 (1996-08-01), None
“Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes”, K. Okamoto et al. / Japanese Journal of Applied Physics vol. 46, No. 9, 2007, pp. L187-L189.
An office action issued to a relevant U.S. Appl. No. 12/130,551 on Apr. 21, 2010.
An office action issued to a relevant U.S. Appl. No. 12/128,400 on Jul. 12, 2010.
An office action issued to a relevant U.S. Appl. No. 12/130,551 on Sep. 23, 2010.
Hata Masayuki
Hiroyama Ryoji
Kameyama Shingo
Nomura Yasuhiko
Golub-Miller Marcia A.
Harvey Minsun
Mots Law PLLC
Motsenbocker Marvin A.
Sanyo Electric Co,. Ltd.
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