Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-07-12
2011-07-12
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
07978744
ABSTRACT:
One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (0001). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
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Hata Masayuki
Hiroyama Ryoji
Kameyama Shingo
Nomura Yasuhiko
Golub-Miller Marcia A.
Harvey Minsun
Mots Law PLLC
Motsenbocker Marvin A.
Sanyo Electric Co,. Ltd.
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